Wet thermal oxidation of GaAs and GaN
نویسندگان
چکیده
منابع مشابه
High-efficiency native-oxide-passivated high-index-contrast ridge waveguide lasers
A GaAs-based high-index-contrast ridge waveguide laser is fabricated using a self-aligned process of deep dry etching plus oxygen-enhanced wet thermal oxidation of low Al-content AlGaAs. Lasers operating at l1⁄4 813 nm (CW, 300 K) with external differential quantum efficiencies as high as 78% are demonstrated, indicating effective passivation of the directly-oxidised etched active region sidewa...
متن کاملو چاه کوانتومی چندتائی InxGa1-xN بررسی مدهای اپتیکی آلیاژ در ناحیه فروسرخ دور In0.5Ga0.5N/GaN
Optical properties of InxGa1-xN alloy and In0.5Ga0.5N/GaN multi quantum wells have been investigated in the region of far infrared. Far-IR reflectivity spectra of In0.5Ga0.5N/GaN multi quantum wells on GaAs substrate have been obtained by oblique incidence p- and s-polarization light using effective medium approximation. The spectra and the dielectric functions response give a good informa...
متن کاملNonselective oxidation of GaAs-based III-V compound semiconductor heterostructures for in-plane semiconductor lasers
A nonselective wet thermal oxidation technique for AlGaAs-containing heterostructures has been shown to enable the fabrication of a variety of novel high-efficiency, high-power GaAs-based in-plane laser devices. Applied in conjunction with a deep anisotropic dry etch, nonselective oxidation yields a simple, self-aligned high-index-contrast (HIC) ridge waveguide (RWG) structure. The native oxide...
متن کاملHydrogen activated radiative states in GaAs/GaAlAs heterostructures and InGaAs/GaAs multiquantum wells
Related Articles Properties of InxGa1−xN films in terahertz range Appl. Phys. Lett. 100, 071913 (2012) Thermal carrier emission and nonradiative recombinations in nonpolar (Al,Ga)N/GaN quantum wells grown on bulk GaN J. Appl. Phys. 111, 033517 (2012) Surface depletion mediated control of inter-sub-band absorption in GaAs/AlAs semiconductor quantum well systems Appl. Phys. Lett. 100, 051110 (201...
متن کاملUltra-compact, high-yield intra-cavity contacts for GaAs/AlGaAs-based vertical-cavity surface-emitting lasers
A novel method of fabricating compact intra-cavity contacts with high yield for GaAs/AlGaAs-based vertical-cavity surface-emitting lasers is presented. By carefully tailoring the composition of highaluminum content layer, a highly selective Al2O3 etch-stop layer can be formed simultaneously with the oxide aperture during wet thermal oxidation. With this technique, contact metals can be uniforml...
متن کامل